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2014 ANNUAL REPORT 59 after irradiation at 500C the resis- tivity values recovered to values closer to their values for the pristine samples Fig. 3.These results are consis- tent with those obtained from our Drexel-MITR NEUP project recently published in Acta Materialia. The 9 dpa samples were deemed as high-priority samples to see signs of irradiation damage. However unrelated laboratory shutdowns led to further delays throughout FY 2014 including limitations on sample ship- ping within the INL complex.The 9 dpa samples were also mostly broken during retrieval and were unable to be separated and identified easily. Resources and funding were directed toward the readily available capsules. These issues prevented the high-dose samples from being available for characterization at CAES in 2014. With the extensive work stoppages preventing ATR sample access at CAES several TEM samples from our parallel Drexel-MITR NEUP irradiation project were shipped to INL for PIE utilizing ATR funds while Darin was onsite.With the excellent assistance of Lingfeng He a recently hired research scientist at INL MITR samples of fine-grained Ti3SiC2 and Ti2AlC were characterized. Results from this work are being prepared for publication in Acta Materialia which revealed the formation of black spots and defect clusters in Ti2AlC after irradiation to 0.1 and 0.4 dpa at 360C Figs. 4a and b and dislocation loops and stacking fault formation in both Ti3SiC2 and Ti2AlC Figure 3. a Room temperature resistivity plotted on a log scale as a function of neutron irradiation temperature at 0.1 dpa. After irradiation at 100C the resistivities of both Ti3SiC2 and Ti3AlC2 increase more than an order of magnitude. After irradiation at 500 and 1000C the resistivity of the Ti3SiC2 recovered to values near those of the pristine values. Some recovery is observed in Ti3AlC2 with only a 2-fold increase after irradiation at 500C.